au.\*:("LILIENTAL-WEBER, Z")
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Extended defects and polarity of hydride vapor phase epitaxy GaN : III-V Nitrides and Silicon CarbideJASINSKI, J; LILIENTAL-WEBER, Z.Journal of electronic materials. 2002, Vol 31, Num 5, pp 429-436, issn 0361-5235Conference Paper
On the dynamic nature of microscopy specimens at lattice resolution = Nature dynamique des spécimens en microscopie avec résolution réticulaireWASHBURN, J; LILIENTAL-WEBER, Z.Journal de physique (Paris). 1989, Vol 50, Num 24, pp 3431-3440, issn 0302-0738Article
Structure and orientation of As precipitates in GaAs grown at low temperature by molecular beam epitaxyCLAVERIE, A; LILIENTAL-WEBER, Z.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1992, Vol 65, Num 4, pp 981-1002, issn 0141-8610Article
Atomic scale indium distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N quantum well structureKISIELOWSKI, C; LILIENTAL-WEBER, Z; NAKAMURA, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 11, pp 6932-6936, issn 0021-4922, 1Article
lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxyKIN MAN YU; LILIENTAL-WEBER, Z.Applied physics letters. 1991, Vol 59, Num 25, pp 3267-3269, issn 0003-6951Article
Electron irradiation and the equilibrium of open core dislocations in gallium nitrideHAWKRIDGE, M; CHERNS, D; LILIENTAL-WEBER, Z et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 5, pp 903-906, issn 0370-1972, 4 p.Conference Paper
Defect formation in epitaxial crystal growthWASHBURN, J; KVAM, E. P; LILIENTAL-WEBER, Z et al.Journal of electronic materials. 1991, Vol 20, Num 2, pp 155-161, issn 0361-5235, 7 p.Article
Formation of As precipitates in GaAs by ion implantation and thermal annealingCLAVERIE, A; NAMAVAR, F; LILIENTAL-WEBER, Z et al.Applied physics letters. 1993, Vol 62, Num 11, pp 1271-1273, issn 0003-6951Article
Determination of As and Ga planes by convergent beam electron diffractionLILIENTAL-WEBER, Z; PARECHANIAN-ALLEN, L.Applied physics letters. 1986, Vol 49, Num 18, pp 1190-1192, issn 0003-6951Article
Transmission electron microscopy characterization of GaN nanowires : III-V Nitrides and Silicon CarbideLILIENTAL-WEBER, Z; GAO, Y. H; BANDO, Y et al.Journal of electronic materials. 2002, Vol 31, Num 5, pp 391-394, issn 0361-5235Conference Paper
Anomalies in annealed LT-GaAs samplesLILIENTAL-WEBER, Z; YU, K. M; WASHBURN, J et al.Journal of electronic materials. 1993, Vol 22, Num 12, pp 1395-1399, issn 0361-5235Article
Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniquesKIN MAN YU; KAMINSKA, M; LILIENTAL-WEBER, Z et al.Journal of applied physics. 1992, Vol 72, Num 7, pp 2850-2856, issn 0021-8979Article
Application of convergent-beam illumination methods to the study of lattice distortion across the interfaceLILIENTAL-WEBER, Z; KANEYAMA, T; TERAUCHI, M et al.Journal of crystal growth. 1993, Vol 132, Num 1-2, pp 103-114, issn 0022-0248Article
Effect of initial process conditions on the structural properties of AlN filmsPADUANO, Q. S; WEYBURNE, D. W; JASINSKI, J et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 259-265, issn 0022-0248, 7 p.Conference Paper
Evidence for superconductivity in low-temperature-grown GaAsBARANOWSKI, J. M; LILIENTAL-WEBER, Z; YAU, W.-F et al.Physical review letters. 1991, Vol 66, Num 23, pp 3079-3082, issn 0031-9007, 4 p.Article
Atomic structure of defects in GaN:Mg grown with Ga polarityLILIENTAL-WEBER, Z; TOMASZEWICZ, T; ZAKHAROV, D et al.Physical review letters. 2004, Vol 93, Num 20, pp 206102.1-206102.4, issn 0031-9007Article
Effects of Al2O3 cap on the structural and electrical properties of Au/Te/Au contacts on an n-type GaAs substrateLIN, X. W; PIOTROWSKA, A; KAMINSKA, E et al.Applied physics letters. 1993, Vol 62, Num 23, pp 2995-2997, issn 0003-6951Article
Microstructure of annealed low-temperature-grown GaAs layersLILIENTAL-WEBER, Z; CLAVERIE, A; WASHBURN, J et al.Applied physics. A, Solids and surfaces. 1991, Vol 53, Num 2, pp 141-146, issn 0721-7250Article
Ion beam synthesis of cubic FeSi2DESIMONI, J; BERNAS, H; BEHAR, M et al.Applied physics letters. 1993, Vol 62, Num 3, pp 306-308, issn 0003-6951Article
Nonconservative formation of <100> misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post-growth annealingCHEN, Y; LILIENTAL-WEBER, Z; WASHBURN, J et al.Applied physics letters. 1993, Vol 63, Num 16, pp 2234-2236, issn 0003-6951Article
Structural characterization of encapsulated Au/Zn/Au ohmic contacts to p-type GaAsLIN, X. W; LILIENTAL-WEBER, Z; WASHBURN, J et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 44-50, issn 1071-1023Article
Schottky barrier instabilities due to contaminationNEWMAN, N; LILIENTAL-WEBER, Z; WEBER, E. R et al.Applied physics letters. 1988, Vol 53, Num 2, pp 145-147, issn 0003-6951Article
Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatmentPAKUŁA, K; BOZEK, R; BARANOWSKI, J. M et al.Journal of crystal growth. 2004, Vol 267, Num 1-2, pp 1-7, issn 0022-0248, 7 p.Article
Comparison between photluminescence and Raman scattering in disordered and ordered alloys of GaInPUCHIDA, K; YU, P. Y; NOTO, N et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 70, Num 3, pp 453-466, issn 0958-6644Article
